Key points are not available for this paper at this time.
Measurements of writing sensitivity and theoretical projections of readout signal-to-noise ratio achievable for several magnetooptical materials and an amorphous semiconductor material are used to assess their storage density and data rate potential in a discrete bit recording system. Dynamic read/write experiments utilizing infrared GaAs lasers presently indicate a density limit of 10(7) bits/cm(2) on MnAlGe and MnGaGe due to grain noise and on GdCo due to domain stability. Wavelength limited resolution appears obtainable on MnBi and TeGeAs although reversibility limitations exist. PtCo seems capable of exceeding 10(8) bits/cm(2) at data rates of 50 M bits/sec.
Blain Brown (Mon,) studied this question.