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We report a simple procedure for the transfer of a given nanostructure from a binary oxide semiconductor to binary chalcogenide compounds. The procedure involves two consecutive ion exchange steps performed in the gas phase and in solution. While there is a complete exchange of substance, a change in stoichiometry, and a change in crystal structure, the morphology is nearly perfectly maintained. Applying a partial exchange also allows a well-controlled manipulation of the nanostructure. Basic chemical guidelines for the ion exchange are discussed. The procedure is compatible with thin film applications.
Dloczik et al. (Tue,) studied this question.