Carbon nitride films synthesized by combined ion-beam and laser-ablation processing

Carbon nitride thin films on Si(100), with N concentrations ranging from 37% to 45% have been synthesized by pulsed laser ablation of graphite under a low-energy nitrogen-ion-beam bombardment. High-energy non-Rutherford backscattering has been employed to measure the atomic ratio of N to C in the films obtained. Electron-diffraction measurements, which give some new diffraction rings in addition to some found in previous work, and x-ray photoelectron-spectroscopy analyses, which give N 1s peaks at 399.1 and 397.4 eV, and C 1s peaks at 283.7, 284.5, and 286.9 eV, suggest the existence of covalent carbon-nitrogen bonds and polycrystallite structures in the amorphous carbide matrix of the films. Raman spectra have also been used to characterize the films. Qualitative tests indicate that the films are relatively hard and adhesive, with quite smooth surfaces.