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We present a new concept to reduce impurity scattering in remotely doped GaAs single quantum wells by using heavy-mass X electrons in barriers formed by short-period AlAs/GaAs superlattices to smooth the potential fluctuations of the ionized Si dopants. Electron mobilities as high as 120m^2/Vs and electron densities up to 1. 510^16m^-2 are obtained in 10 nm GaAs single quantum wells in the one-subband conductivity mode without any parallel conductance. In addition to magnetotransport we present voltage dependent capacitance and photoluminescence measurements as well as self-consistent calculations to demonstrate the applicability of our concept.
Friedland et al. (Mon,) studied this question.
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