Experimental determination of minority-carrier lifetime and recombination mechanisms in p-type Hg1−xCdxTe

This paper presents an experimental study of minority-carrier lifetime and recombination mechanisms in n+-on-pHg1−xCdxTe photodiodes. Diode pulse recovery lifetime measurements have been carried out as a function of temperature, net acceptor concentration, and excess carriers in the alloy composition range 0.2