Experimental determination of minority-carrier lifetime and recombination mechanisms in p-type Hg1−xCdxTe

This paper presents an experimental study of minority-carrier lifetime and recombination mechanisms in n+-on-pHg1−xCdxTe photodiodes. Diode pulse recovery lifetime measurements have been carried out as a function of temperature, net acceptor concentration, and excess carriers in the alloy composition range 0.2<x<0.4. Based upon these measurements Shockley-Read recombination involving a deep center located close to midgap is shown to be the dominant recombination mechanism in the photodiodes studied. Minority-carrier lifetime measured by diode pulse recovery and minority-carrier diffusion length measured by the electron beam induced current (EBIC) technique are further correlated with Hg1−xCdxTe photodiode performance.