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We have computed the excess carrier lifetime for conduction band-heavy-hole band Auger recombination for n-type Hg1−xCdxTe. The general theory assuming parabolic bands and a constant value for the overlap integrals has been developed by Beattie and Landsberg. We have included the effects of nonparabolic bands and have used the f-sum rule to obtain the k dependence of the overlap integrals. Using numerical techniques we have evaluated the temperature dependence of the lifetime for several x values.
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P. E. Petersen (1970) studied this question.
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