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A method for the fabrication of a completely integrated solid-state electrochemical sensor which combines a minature liquid junction reference electrode with a CMOS ISFET is presented. The reference electrode is fabricated by preferentially etching silicon to form a porous silicon frit. The CMOS process provides electrical encapsulation of the ISFET. The performance of the reference electrode and CMOS ISFET as an integrated sensor is demonstrated.
Smith et al. (Sat,) studied this question.