A method for the fabrication of a completely integrated solid-state electrochemical sensor which combines a minature liquid junction reference electrode with a CMOS ISFET is presented. The reference electrode is fabricated by preferentially etching silicon to form a porous silicon frit. The CMOS process provides electrical encapsulation of the ISFET. The performance of the reference electrode and CMOS ISFET as an integrated sensor is demonstrated.
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Smith et al. (1986) studied this question.
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