Grain boundaries in graphene grown by chemical vapor deposition

The scientific literature on grain boundaries (GBs) in graphene reviewed. The review focuses mainly on the experimental findings on grown by chemical vapor deposition (CVD) under a very wide range of conditions (temperature, pressure hydrogen/hydrocarbon ratio, gas velocity and substrates). Differences were found in the GBs depending on origin of graphene: in micro-mechanically cleaved graphene (produced using originating from high-temperature, high-pressure synthesis), rows of -hexagonal rings separating two perfect graphene crystallites are found more, while in graphene produced by CVD—despite the very wide range growth conditions used in different laboratories—GBs with more pronounced are more frequent. In connection with the observed disorder, the stability two-dimensional amorphous carbon is discussed and the growth conditions may impact on the structure of the GBs are reviewed. The most frequently methods for the atomic scale characterization of the GB structures, their and limitations and the alterations of the GBs in CVD graphene the investigation (e. g. under e-beam irradiation) are discussed. The effects GB disorder on electric and thermal transport are reviewed and the relatively data available on the chemical properties of the GBs are summarized. are complex enough nanoobjects so that it may be unlikely that two experimentally produced GBs of several microns in length could be completely in all of their atomic scale details. Despite this, certain generalized may be formulated, which may be helpful for experimentalists in the results and in planning new experiments, leading to a more picture of GBs in CVD graphene.