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We report the most recent work on the modeling of type-II InAs/GaSb superlattices using the empirical tight binding method in an sp^3s^* basis. After taking into account the antimony segregation in the InAs layers, the modeling accuracy of the band gap has been improved. Our calculations agree with our experimental results within a certain growth uncertainty. In addition, we introduce the concept of GaₗIn₁-ₗ type interface engineering in order to reduce the lattice mismatch between the superlattice and the GaSb (001) substrate to improve the overall superlattice material quality.
Wei et al. (Fri,) studied this question.