We report the most recent work on the modeling of type-II InAs/GaSb superlattices using the empirical tight binding method in an sp³s* basis. After taking into account the antimony segregation in the InAs layers, the modeling accuracy of the band gap has been improved. Our calculations agree with our experimental results within a certain growth uncertainty. In addition, we introduce the concept of GaₓIn_1-x type interface engineering in order to reduce the lattice mismatch between the superlattice and the GaSb (001) substrate to improve the overall superlattice material quality.
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Wei et al. (2004) studied this question.
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