Key points are not available for this paper at this time.
The current equation based on the classical model of mobility degradation due to the gate field fails at V₆ₒ - Vₓ = 11, 7. 5, and 4. 5 V for MOSFET's with t OX = 450, 350, and 250 Å, respectively, at room temperature and at very low VDS. The failure is believed to be caused by the quantization of inversion carriers in the deep potential well and the populating of the upper subbands in
Mou‐Shiung Lin (Fri,) studied this question.