The classical versus the quantum mechanical model of mobility degradation due to the gate field in MOSFET inversion layers

The current equation based on the classical model of mobility degradation due to the gate field fails at <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">VGS - VT</tex> = 11, 7.5, and 4.5 V for MOSFET's with t <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OX</inf> = 450, 350, and 250 Å, respectively, at room temperature and at very low VDS. The failure is believed to be caused by the quantization of inversion carriers in the deep potential well and the populating of the upper subbands in