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July 3, 2026IEEE Transactions on Electron Devices

Investigation of Gate Field-Plate Effects on f max Improvement in GaN HEMTs for RF Applications

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XYXuejing YangWPWan-Soo ParkDKDae-Hyun Kim

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Yang et al. (2026) studied this question.

synapsesocial.com/papers/6ab3867389e2102bc9798408https://doi.org/10.1109/ted.2026.3705009
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