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June 26, 2020IEEE Electron Device Letters

360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

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Authors

JMJeong‐Sun MoonJWJoel WongBGBob Grabar

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Moon et al. (2020) studied this question.

synapsesocial.com/papers/6a77df22d3a6aa87c6be0170https://doi.org/10.1109/led.2020.3005337
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