High Performance HZO-Based FRAM With Low-Voltage and Nanosecond Operation in Wide Temperature Range

This work demonstrates an HZO-based ferroelectric random access memory (FRAM) that achieves low-power, high-speed operation alongside robust wafer-level reliability. The fabricated arrays exhibit a 100% pass rate in long-term retention tests, confirming exceptional stability across a wide temperature range (- 40~∘C to175~∘C). Notably, rewake-up phenomena are clearly observed in wafer-level devices during high-temperature electrical cycling. Furthermore, the FRAM achieves near-DRAM performance, featuring fast write/read speeds of 20–25 ns and low operating voltages of approximately 1.4 V across broad temperature conditions. These results establish an HZO-based FRAM as a commercially viable nonvolatile memory solution for demanding wide-temperature applications.