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The structure of a vicinal Si(111) stepped surface is analyzed by force microscopy in air to reveal a fine structure in a step bunching area, and a monoatomic step in a terrace region. Step heights of one to three monoatomic layers were also observed on a debunched Si(111) surface. These steps have low crystallographic indices 112̄, 101̄, 01̄1, 213̄, and 1̄2̄3. The force microscope images were in good agreement with scanning electron microscope and reflection electron microscope images observed in ultrahigh vacuum just after sample annealing by resistive heating.
Suzuki et al. (1991) studied this question.