July 21, 2006

Relationship between Intrinsic Breakdown Field and Bandgap of Materials

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Abstract

A universal expression for the relationship between intrinsic breakdown field and bandgap of both semiconductors and insulators is proposed, and a quantitative criterion for distinguishing between semiconductors and insulators is introduced for the first time

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Li-Mo Wang (Fri,) studied this question.

synapsesocial.com/papers/6a07d11273bf37127155d5e7 https://doi.org/https://doi.org/10.1109/icmel.2006.1651032

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