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Top-gate HfS2 field-effect transistors (FETs) with 5 nm HfO2 as dielectrics are successfully demonstrated, with on/off ratio of 10(5) and subthreshold swing of 95 mV dec(-1) . Moreover, due to the self-functionalization of HfS2 , uniform and ultrathin HfO2 film free of pinhole-like defects could be deposited on HfS2 , which is dramatically different from other transition metal dichalcogenide FETs.
Xu et al. (Wed,) studied this question.