Engineering interface-type resistance switching based on forming current compliance in ITO/Ga2O3:ITO/TiN resistance random access memory: Conduction mechanisms, temperature effects, and electrode influence

In this paper, an ITO/Ga2O3:ITO/TiN structured resistance random access memory is introduced. Either interface or filament conduction mechanism can be induced depending on the forming compliance current, which has not been investigated before. Material analyses and electrical I–V measurements on this ITO/Ga2O3:ITO/TiN have also been carried out. The interface conduction mechanism was confirmed by a size-effect experiment, where resistance varied inversely to via size. In addition, the current fitting results show that Schottky emission dominates the on- and off-state currents. All physical mechanisms of device resistive switching behaviors are explained by our models and also confirmed by I–V characteristics.