Cadmium‐Free InP/ZnSeS/ZnS Heterostructure‐Based Quantum Dot Light‐Emitting Diodes with a ZnMgO Electron Transport Layer and a Brightness of Over 10 000 cd m−2

Cadmium-free thick-shelled InP/ZnSeS/ZnS quantum dot (QD) was synthesized using the heating-up approach. This quantum dots was used in inverted quantum dots light emitting diode (QLED) devices. The brightness of the inverted QLED device can reach a brightness of over 10 000 cd m-2 , low turn-on voltage (2.2 V), and high power efficiency (4.32 lm W-1 ).