Field-Plated Lateral β-Ga2O3 Schottky Barrier Diode with High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2

In this letter, we report on demonstrating high-performance field-plated lateral -Ga 2 O 3 Schottky barrier diode (SBD) on a sapphire substrate with a reverse blocking voltage of more than 3 kV and a low dc specific ON-resistance (R ₎₍, {ₒ₏}) of 24. 3 m cm 2 at an anode–cathode spacing (L ₀₂) of 24~ m. To the best of our knowledge, this lateral breakdown voltage (BV) >3 kV with dc power figure-of-merit (FOM) >370 MW/cm 2 is the highest BV achieved among all the -Ga 2 O 3 SBDs. Meanwhile, lateral -Ga 2 O 3 SBD with L ₀₂ = 16\, \, m also demonstrates a high BV of 2. 25 kV and low R ₎₍, {ₒ₏} = 10. 2\, \, m cm 2, yielding a record high dc power FOM of 500 MW/cm 2. Combining with 10 9 high-current ON/OFF ratio, 1. 15-eV Schottky barrier height and 1. 25 ideality factor, -Ga 2 O 3 SBD with field-plate structure shows its great promise for power electronics applications.