Electronic properties of chemically doped graphene

The controlled modification of graphene's electronic structure through chemical doping is a promising way to expand its possible applications. It is also a subject of interest for fundamental research as the effects of the dopants on the electronic structure of a two-dimensional (2D) material differ vastly from chemical doping of conventional 3D semiconductors such as silicon. In this research update, the authors describe the main results obtained so far on the modification of the electronic properties of graphene upon chemical doping. This includes the atomic scale characterization of the dopant configuration and charge distribution as probed by scanning tunneling microscopy and spectroscopy, momentum-resolved band structure modification as probed by angle-resolved photoemission spectroscopy, and detailed scattering mechanisms information obtained from magnetoresistance measurements. They give an exhaustive and critical account of the above-mentioned subjects, describe open questions, and suggest future research directions.