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In this paper, a novel resonant pressure sensor is developed based on electrostatic excitation and piezoresistive detection. The measured pressure applied to the diaphragm will cause the resonant frequency shift of the resonator. The working mode stress-frequency theory of a double-ended tuning fork with an enhanced coupling beam is proposed, which is compatible with the simulation and experiment. A unique piezoresistive detection method based on small axially deformed beams with a resonant status is proposed, and other adjacent mode outputs are easily shielded. According to the structure design, high-vacuum wafer-level packaging with different doping in the anodic bonding interface is fabricated to ensure the high quality of the resonator. The pressure sensor chip is fabricated by dry/wet etching, high-temperature silicon bonding, ion implantation, and wafer-level anodic bonding. The results show that the fabricated sensor has a measuring sensitivity of ~19 Hz/kPa and a nonlinearity of 0.02% full scale in the pressure range of 0-200 kPa at a full temperature range of -40 to 80 °C. The sensor also shows a good quality factor >25,000, which demonstrates the good vacuum performance. Thus, the feasibility of the design is a commendable solution for high-accuracy pressure measurements.
Han et al. (Mon,) studied this question.