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Abstract In this review paper, the residual strain of a polycrystalline halide perovskite film is systematically studied based on its structural inhomogeneity, which is closely correlated to the local carrier dynamics caused by a modulated electronic band structure. Long-range collective strain ordering is responsible for the overall structural properties, consequently determining the optoelectronic properties of the perovskite film. Notably, the perovskite phase stability is strongly affected by the internal strain, favoring a lower energy state. The important parameters affecting the residual strain in a real perovskite film, ranging from thermal stress to lattice mismatch and compositional inhomogeneity, are subsequently introduced along with their impacts on the optoelectronic properties and/or the stability of the crystals.
Kim et al. (Tue,) studied this question.