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We report a comparative study of two structurally similar donor–acceptor complexes with ( 1a ) and without ( 2a ) H-bonding using X-ray crystallography, spectroscopic analysis, and density functional theory calculations. H-Bonding enhances the donor–acceptor interactions, as manifested in a narrower band gap and shorter π-stacking distance in 1a versus 2a, despite 2 being a stronger donor than 1 . Thin-film transistors of 1a showed ambipolar charge transport with “double dip” characteristics, whereas no transistor behavior was observed for 2a .
Yee et al. (Mon,) studied this question.