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We report the dual gate (DG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with a top-gate (TG) drain offset (L ₓ₆ (₎₅₅) ) structure under dual-gate driving. The TFT shows an on/off current ratio of 10^{7}, subthreshold swing of 0. 23 V/dec, and field-effect mobility (₅₄) of 14. 6 cm 2 /Vs when L ₓ₆{ (Off{) }} is 5 m, which is 30% reduction compared to the conventional DG TFT with no drain offset (₅₄=20. 9 cm 2 /Vs). The Technology computer-aided design simulation indicates the electron concentration of 10^{16} /cm 3 at the offset region near top gate insulator/a-IGZO interface when L ₓ₆{ (Off{) }} is 5 m. The fabricated TFT exhibits stable performance under positive bias temperature stress with a threshold voltage shift of +0. 1 V.
Priyadarshi et al. (Wed,) studied this question.