NeuroSim V1.4: Extending Technology Support for Digital Compute-in-Memory Toward 1nm Node

Over the past decade, numerous compute-in-memory (CIM) platforms have been proposed in the literature. While emerging non-volatile memory based analog CIM (ACIM) has been widely studied, its silicon demonstrations are in the mature legacy node (22 nm or above). As an alternative, digital CIM (DCIM) based on static random access memory (SRAM) is recently drawing significant attention, as it enjoys the scaling benefits with the logic process to the leading-edge node (5 nm or below), and does not suffer from the accuracy loss due to process/voltage/temperature (PVT) variations. To assess the potential of DCIM in the future, we release NeuroSim V1. 4, a CIM benchmark framework, which supports advanced technology nodes down to 1 nm node. We project the technology parameters (standard cell, transistor and interconnect) using TCAD device simulations, interconnect modeling, and the available industry/IRDS roadmaps. State-of-the-art technology trends such as fin-depopulation, buried power rail, stacked nanosheet, etc are captured in the updated parameters. Technology scaling down to 1 nm enables DCIM to achieve 1. 4 1. 8 and 44. 1 63. 1 higher system-level figure of merit than state-of-the-art 7 nm SRAM-based ACIM and 22 nm RRAM-based ACIM, respectively, for representative workloads such as ResNet18 and ResNet34 inference.