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We present an experimental study on optical properties and dynamics of direct and spatially and momentum indirect excitons in AlGaAs/AlAs quantum wells near the crossover between - and X-valley confined electron states. The time-integrated photoluminescence experiment at T=4. 8 K revealed three simultaneously observed optical transitions resulting from (a) a direct exciton recombination, involving an electron and a hole states both located in the -valley in the quantum well layer, and (b) two spatially and momentum indirect excitons, comprising of the confined electron states in the X-valley in the AlAs barrier with different effective masses and quantum well holes in the -valley. The measured spatial extent, density dependence and temperature dependence of the structure photoluminescence revealed characteristics necessary to pinpoint the states' nature and provided their characterization crucial in future device design. Temporal dynamics observed in the time-resolved photoluminescence measurement showed the complexity of the capture and recombination dynamics, largely affected by nonradiative processes, what is additionally critical in the system's use. This solid state platform hosting both direct and indirect excitons in a highly tunable monolithic system can benefit and underline the operation principles of novel electronic and photonic devices.
Biegańska et al. (Tue,) studied this question.