Study of Parasitic Effects for Accurate Dynamic Characterization of SiC MOSFEFTs: Comparison between Experimental Measurements and Numerical Simulations

The high-speed switching capabilities of wide bandgap (WBG) power devices have posed challenges in accurately evaluating their dynamic characteristics, primarily due to the increasing influence of parasitic components in switching test circuits. To address this issue, we investigated the impact of parasitics by conducting dynamic tests and schematic-level transient simulation on a half-bridge switching circuit incorporating SiC MOSFETs. This comparative analysis identified specific parasitic components responsible for undesirable behaviors such as spikes and ringing in the switching waveform. Our findings provide insights into which parasitic components in the test circuit are critical for the accurate dynamic characterization of SiC MOSFETs.