Abstract In this study, a novel terahertz temperature sensor is presented. It is constructed by integrating an electromagnetically induced transparent-like metasurface with patterned GaN thin film. To investigate the sensor mechanism, unpatterned and patterned GaN thin films-based terahertz metasurface temperature sensors are prepared respectively. Within the range of 300-540 K, the transmission amplitude and resonance frequency of terahertz wave for the patterned GaN thin film sensor behave linearly as temperature increases, which is different from the unpatterned ones. For the unpatterned ones, the trend of temperature-dependent conductivity in terahertz band is similar with that in direct current mode. The experimental results demonstrate that both the amplitude and frequency sensitivities of the patterned GaN thin film temperature sensor are 0.08%/K and 0.23GHz/K, respectively. This research offers novel perspectives for the development of dual-mode terahertz temperature sensors, which hold great promise for applications in temperature monitoring within industrial production processes and electrical equipment.
Zhang et al. (Wed,) studied this question.