Abstract Mg 3 Sb 2 -based materials have emerged as highly promising n -type thermoelectric materials within the medium temperature range (300–800 K), offering a more cost-effective and environmentally benign alternative to conventional telluride-based thermoelectric materials. These materials complement Bi 2 Te 3 -based systems for near-room temperature applications (300–500 K) and PbTe/GeTe/SnTe for medium-temperature ranges (500–800 K). This paper presents a systematic review of recent significant advances in the thermoelectric performance of Mg 3 Sb 2 , achieved through optimized doping and fabrication strategies. It outlines key methodologies and underlying physical mechanisms that contribute to high-performance n -type Mg 3 Sb 2 , discusses challenges associated with device integration, and proposes future research directions.
Li et al. (Sun,) studied this question.