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This review highlights advances in Mg3Sb2 thermoelectric performance, suggesting further research directions for n-type materials.
Mg 3 Sb 2 -based materials have emerged as highly promising n -type thermoelectric materials within the medium temperature range (300–800 K), offering a more cost-effective and environmentally benign alternative to conventional telluride-based thermoelectric materials. These materials complement Bi 2 Te 3 -based systems for near-room temperature applications (300–500 K) and PbTe/GeTe/SnTe for medium-temperature ranges (500–800 K). This paper presents a systematic review of recent significant advances in the thermoelectric performance of Mg 3 Sb 2 , achieved through optimized doping and fabrication strategies. It outlines key methodologies and underlying physical mechanisms that contribute to high-performance n -type Mg 3 Sb 2 , discusses challenges associated with device integration, and proposes future research directions.
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Li et al. (2026) studied this question.
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