What question did this study set out to answer?

The aim is to develop a compact, high-efficiency gallium nitride high power amplifier for broadband applications.

April 19, 2026Open Access

A 45 W and 30% PAE 0.9-4.0 GHz 2-stage GaN MMIC High Power Amplifier with Compact Reactive Matching Circuits

Key Points

The aim is to develop a compact, high-efficiency gallium nitride high power amplifier for broadband applications.
Designed a two-stage monolithic microwave integrated circuit (MMIC) HPA
Employed compact reactive matching circuits for size reduction
Optimized circuit parameters to balance size and performance
Achieved a small-signal gain of at least 30 dB
Output power ranged from 42.3 to 54.3 W
Power added efficiency (PAE) exceeded 30% across the 0.9 to 4.0 GHz bandwidth

Abstract

This paper presents the design and measurement of a broadband gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) high power amplifier (HPA). To reduce the chip size, compact reactive matching circuits (CRMCs) were employed, and their parameters were optimized by considering the trade-off between circuit size and the performance of HPA. Consequently, a 2-stage MMIC HPA occupying a chip area of 4.9 × 4.0 mm2 was successfully developed. Measured results of the HPA across the 0.9 to 4.0 GHz band demonstrated a small-signal gain of at least 30 dB, an output power (Pout) of 42.3-54.3 W, and a power added efficiency (PAE) greater than 30% over the entire bandwidth in CW operation with a 35 V supply.

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