Spin–orbit torque (SOT) driven magnetization switching in all-van der Waals (vdW) heterostructures is a promising route toward next-generation, high-density spintronic memories. Improving switching efficiency and achieving nanosecond-scale operation are essential for practical applications. Here, we demonstrate room-temperature, field-free SOT magnetization switching in WTe2/Fe3GaTe2 heterostructures, achieved through an optimized fabrication process. The device achieves a high switching ratio of 90% at a low current density on the order of 105 A/cm2. Moreover, we demonstrate nanosecond-timescale magnetization switching while maintaining high switching ratio and energy efficiency. These results advance the viability of all-vdW heterostructures for energy-efficient, high-speed memory applications.
Zhou et al. (Mon,) studied this question.