Defect Thermodynamics and the Intrinsic Stability Window of Mg3Sb2

Magnesium antimonide (Mg3Sb2) has emerged as a promising high-performance thermoelectric material, yet its efficiency is fundamentally determined by intrinsic point defects. In this study, we present a comprehensive investigation of defects in the intermetallic compound Mg3Sb2 using first laws of thermodynamics and density functional theory (DFT) within the generalized gradient approximation (GGA). By calculating the energy of defect formation and the charge transition energy between energy levels, it was determined how the change in chemical potential associated with phase synthesis affects the phase stability and carrier concentrations. Calculations show that donor defects dominate in Mg-rich alloys, primarily antimony vacancies and magnesium atoms in interstitial positions. This means that in a phase with a slight magnesium excess, e.g., Mg3.01Sb1.99 at 1400 K, n-type conductivity dominates. In the opposite case, i.e., in an Sb-rich alloy, magnesium vacancies spontaneously form in the Wyckoff 1a position. These ionized acceptors induce strong self-compensation, blocking the Fermi level about 0.38 eV above the valence band maximum. As a result of this process, the Mg3Sb2 phase, at elevated temperatures, becomes the non-stoichiometric Mg2.99Sb2.01 phase, which causes the material to retain p-type conductivity and actively block doping-induced n-type conductivity. The conducted studies demonstrate that the homogeneity range of the Mg-Sb system, although traditionally considered narrow, has a significant impact on the semiconducting properties of the material. Furthermore, they also point to the need for continued research on high temperature in the area of synthetic defect engineering, interface engineering, and optimization of the thermoelectric properties of materials based on Mg-Sb alloys.