Adding P and Sb into InAs produce InAsPSb alloys which offer exclusive opportunities to create optoelectronic devices for operations in the mid-infrared range. These materials are being used to design flexible nano-/micro-electronics. The InAs1-x-yPySbx/n-InAs (GaAs) quantum wells provide strong confinement of electrons and holes. This has changed the carrier capture efficiency, prevented charge leakage and improved performance of devices at higher temperatures. Very few structural and vibrational studies are known for InAs1-x-yPySbx films. Phonons play crucial role for assessing their electronic, and optical traits. Gas source MBE method is used here to prepare high-quality InAs1-x-yPySbx epilayers on n-InAs and/or GaAs substrates. InAs1-x-yPySbx suffer from immiscibility issues when As composition, is less than lt; 0.4. Results of systematic structural and phonon properties are reported using synchrotron extended X-ray absorption fine structure, Raman scattering and Fourier transform infrared reflectivity. Comprehensive simulations provided valuable information on the nearest-neighbor bond-lengths and vibrational features. These studies can be extended to many other technologically important materials.
Talwar et al. (Thu,) studied this question.
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