Interfacial oxygen-scavenging-driven formation of atomic-layer-deposited MoO 2 on MoN x electrodes for improved TiO 2 capacitor performance

Key Points

• The aim is to investigate how oxygen-scavenging MoN x affects the formation of MoO 2 for better capacitor performance.
• Utilized atomic layer deposition (ALD) for MoO x on MoN x electrodes
• Converted ALD MoO x into monoclinic MoO 2 through oxygen-scavenging
• Assessed the electrical performance of TiO 2-based capacitors
• Achieved low leakage currents in TiO 2 capacitors
• Demonstrated ultralow equivalent oxide thickness (EOT)
• Enhanced capacitor performance compared to conventional configurations