Interfacial oxygen-scavenging-driven formation of atomic-layer-deposited MoO ₂ on MoN x electrodes for improved TiO ₂ capacitor performance

Wangu Kang; J.H. Lee; Sangwook Lee

doi:10.1039/d5tc04067a

January 1, 2026Journal of Materials Chemistry C

Interfacial oxygen-scavenging-driven formation of atomic-layer-deposited MoO ₂ on MoN x electrodes for improved TiO ₂ capacitor performance

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Key Points

The aim is to investigate how oxygen-scavenging MoN x affects the formation of MoO 2 for better capacitor performance.
Utilized atomic layer deposition (ALD) for MoO x on MoN x electrodes
Converted ALD MoO x into monoclinic MoO 2 through oxygen-scavenging
Assessed the electrical performance of TiO 2-based capacitors
Achieved low leakage currents in TiO 2 capacitors
Demonstrated ultralow equivalent oxide thickness (EOT)
Enhanced capacitor performance compared to conventional configurations

Implication

This research demonstrates improved performance in TiO 2 capacitors using oxygen-scavenging MoN x to enhance ALD MoO 2 formation, indicating potential for advanced energy storage.

Abstract

Oxygen-scavenging MoN x converts ALD MoO x into metastable monoclinic MoO 2 , enabling high-k rutile TiO 2 -based capacitors with low leakage and ultralow EOT.

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Cite This Study

Kang et al. (2026) studied this question.

synapsesocial.com/papers/696c785beb60fb80d1396871 https://doi.org/10.1039/d5tc04067a

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Interfacial oxygen-scavenging-driven formation of atomic-layer-deposited MoO ₂ on MoN x electrodes for improved TiO ₂ capacitor performance

Key Points

Implication

Abstract

Discussion

Cite This Study

Interfacial oxygen-scavenging-driven formation of atomic-layer-deposited MoO ₂ on MoN x electrodes for improved TiO ₂ capacitor performance

Key Points

Implication

Abstract

Discussion

Cite This Study

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