Key points are not available for this paper at this time.
A new technique utilizing conventional x-ray diffraction in conjunction with total external reflection has provided a powerful tool for studying ordered interfaces and surface phenomena. It has been used in this work to study the details of the interface region of a molecular beam epitaxially grown Al single crystal on a molecular beam epitaxially grown GaAs single-crystal substrate. A simple model including variations of the lattice parameter and disorder in the interface region is in agreement with these experimental results.
Marra et al. (Thu,) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: