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A new technique utilizing conventional x-ray diffraction in conjunction with total external reflection has provided a powerful tool for studying ordered interfaces and surface phenomena. It has been used in this work to study the details of the interface region of a molecular beam epitaxially grown Al single crystal on a molecular beam epitaxially grown GaAs single-crystal substrate. A simple model including variations of the lattice parameter and disorder in the interface region is in agreement with these experimental results.
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Marra et al. (1979) studied this question.
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