GaAs semiconductor opening switches grown by halide vapor phase epitaxy

Semiconductor opening switches (SOSs) are pulsed power components that enable high-power, high repetition rate switching with ns switching times, but require deep junctions that can be onerous to manufacture using diffusion methods. We demonstrate an 80 μm GaAs SOS diode with a ∼38 μm deep junction grown under 1 h by halide vapor phase epitaxy. Graded p-type doping was achieved using dimethylzinc, while the n-type background doping was utilized for the n-type side of the junction. The diode doping profile was characterized using electrochemical capacitance-voltage, and scanning Kelvin probe force microscopy was used to identify the shape and depth of the junction. Single and multiple diode stacks were processed and then characterized with a pulser circuit to evaluate their SOS performance. A six-diode stack generated a 2.5 kV pulse cutting off a peak current density of 6.8 kA/cm2. Circuit gain ranged from 6 to 11, decreasing with input bias. Rise time as low as 900 ps and repetition rates of 4 MHz were achieved. The choice of GaAs opens a new application space for SOS devices with narrow pulses and high repetition rates.