Assessment reveals improved retention time and stability in RRAM devices with varying top electrodes, indicating the magnetic field enhances switching performance.
Key Points
Switching performance improved with a magnetic field, showcasing versatile electrode configurations.
Endurance and retention times reached up to 1000 cycles and 1000 seconds for devices with silver electrodes.
Sputter deposited HfO X -based RRAM devices demonstrated superior stability during resistive switching analysis.
Findings highlight the potential of magnetic fields to enhance non-volatile memory technology through resistance tuning.