Atomic layer deposition of MoO2 using a tetravalent precursor for template-driven rutile TiO2 growth in DRAM capacitors

Key Points

• Improved growth of rutile titanium dioxide was observed using a tetravalent precursor for atomic layer deposition.
• This process involved precise layering techniques to achieve optimized structural properties for DRAM capacitors.
• The study highlights the significance of molybdenum dioxide in enhancing electrochemical performance of the materials used.
• Further investigations are needed to understand long-term effects and scalability of this method for semiconductor applications.