Anisotropic redistribution of coherently de-channelled electrons around dislocations in gallium nitride revealed by 4D Scanning Transmission Electron Microscopy

Key Points

• Dislocations in gallium nitride showed a distinct anisotropic redistribution of coherently de-channelled electrons.
• Key evidence reveals significant spatial variations influenced by crystalline defects and electronic structures.
• Assessment using 4D scanning transmission electron microscopy provided insights into electron behaviour around dislocations.
• Findings may enable improved material design for semiconductor applications, but further studies are needed on other materials.