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March 3, 2026
Pulsed laser machining of silicon carbide wafers: A review
YX
Yu Xuehua
Hunan University
WH
Wei Haiying
Hunan University
ZY
Zhang Yi
Hunan University
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Key Points
Pulsed laser machining achieves efficient material removal in silicon carbide.
Variation in laser parameters can lead to distinct thermal effects and microstructural changes.
Comprehensive analysis of existing literature highlights optimization methods for laser machining.
Implications for improved manufacturing processes in semiconductor and electronic applications.
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Xuehua et al. (Thu,) studied this question.
synapsesocial.com/papers/69a76733badf0bb9e87dffc7
https://doi.org/https://doi.org/10.1016/j.jmatprotec.2026.119241
Pulsed laser machining of silicon carbide wafers: A review | Synapse