This paper proposes a dual-side hybrid embedding network (DHEN) to mitigate gain degradation in terahertz amplifiers at frequencies near fmax. The proposed approach employs a pre-embedding network for parasitic absorption, followed by Y-embedding for gain enhancement. A theoretical analysis is conducted to derive the embedding conditions for process-constrained circuit synthesis. In this architecture, a capacitive base-side pre-embedding provides intrinsic DC isolation, while a defected-ground-structure (DGS) inductor realizes the Y-embedding inductive element with reduced layout area. Based on the DHEN, a four-stage amplifier is designed in a 130 nm SiGe BiCMOS process. Electromagnetic co-simulation results demonstrate a power gain of 19.3 dB at 280 GHz, corresponding to an 11.5 dB improvement over a conventional unboosted amplifier. The proposed approach provides a unified synthesis methodology that simultaneously addresses parasitic absorption, DC isolation, and gain enhancement for near-fmax THz amplifier design.
Liu et al. (Tue,) studied this question.