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September 1, 1952Physical Review6,494 citations

Statistics of the Recombinations of Holes and Electrons

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WSW. ShockleyWRW. T. Read

Key Points

  • To analyze the statistical mechanics and kinetics of electron and hole recombination in semiconductors occurring through intermediate energy-level trapping centers.
  • Formulated a statistical model assuming recombination occurs via traps located within the semiconductor energy bandgap.
  • Modeled traps with two permissible charge states differing by a single electronic charge.
  • Derived analytical equations relating injected carrier lifetimes to initial conductivity and carrier injection density.
  • Demonstrated that excess carrier lifetime is quantitatively governed by both the initial semiconductor conductivity and the injected carrier density.
  • Established a theoretical framework for trap-assisted recombination kinetics across varying carrier concentrations in semiconductors.

Abstract

The statistics of the recombination of holes and electrons in semiconductors is analyzed on the basis of a model in which the recombination occurs through the mechanism of trapping. A trap is assumed to have an energy level in the energy gap so that its charge may have either of two values differing by one electronic charge. The dependence of lifetime of injected carriers upon initial conductivity and upon injected carrier density is discussed.

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Cite This Study

Shockley et al. (1952) studied this question.

synapsesocial.com/papers/69d812955c3030ff03d190cchttps://doi.org/10.1103/physrev.87.835
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