Theoretical analysis demonstrates the kinetics of trap-mediated electron-hole recombination in semiconductors, highlighting how carrier density and conductivity dictate carrier lifetimes.
The statistics of the recombination of holes and electrons in semiconductors is analyzed on the basis of a model in which the recombination occurs through the mechanism of trapping. A trap is assumed to have an energy level in the energy gap so that its charge may have either of two values differing by one electronic charge. The dependence of lifetime of injected carriers upon initial conductivity and upon injected carrier density is discussed.
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Shockley et al. (1952) studied this question.
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